NXP Semiconductors - BB170X

  1. Home
  2. NXP Semiconductors - BB170X
BB170X by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BB170X
Description Varactors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
Datasheet BB170X Datasheet
In Stock2,824
NAME DESCRIPTION
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,824 $0.153 $432.072

Popular Products

Category Top Products

SVC321SP by Onsemi

SVC321SP

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 459 pF; Maximum Repetitive Peak Reverse Voltage: 8 V;
SVC390 by Onsemi

SVC390

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 50 pF; Minimum Quality Factor: 200;
BB804G215 by NXP Semiconductors

BB804G215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934056920115 by NXP Semiconductors

934056920115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5474 by Onsemi

1N5474

Onsemi

1N5474 by Onsemi is a varactor diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.
BB910133 by NXP Semiconductors

BB910133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB212-AMMOPAK by NXP Semiconductors

BB212-AMMOPAK

NXP Semiconductors

BB212-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 22.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With its through-hole design and silicon material, it ensures reliable performance in various electronic circuits.
1N4804 by Onsemi

1N4804

Onsemi

1N4804 by Onsemi is a varactor diode with a min quality factor of 15 and max reverse current of 0.000000005 uA. It has a nominal capacitance of 12 pF, making it ideal for applications requiring variable capacitance diodes in circuits operating b/w -65 to 150 °C.
MDX587C by Texas Instruments

MDX587C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
1N5456 by Onsemi

1N5456

Onsemi

1N5456 by Onsemi is a varactor diode with 175 min Q factor, 100 pF nominal capacitance, and -65 to 175 °C operating temp. Ideal for RF tuning circuits due to its abrupt variable capacitance classification. With a max reverse current of 0.00000002 uA, it ensures efficient performance in various applications.
MMBV2103L by Onsemi

MMBV2103L

Onsemi

MMBV2103L by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 10 pF, and breakdown voltage of 30 V. It is used in RF applications for frequency tuning due to its variable capacitance property.
BBY42-T by NXP Semiconductors

BBY42-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMVL3102T1 by Onsemi

MMVL3102T1

Onsemi

MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.
MBV109T1 by Onsemi

MBV109T1

Onsemi

MBV109T1 by Onsemi is a varactor diode with a min quality factor of 200, operating in the very high frequency band. It has a nominal capacitance of 29 pF and a max power dissipation of 0.28 W. Ideal for applications requiring variable capacitance, such as RF tuning circuits in small outline packages.
BB909B143 by NXP Semiconductors

BB909B143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB178/T3 by NXP Semiconductors

BB178/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5449 by Onsemi

1N5449

Onsemi

The Onsemi 1N5449 Varactor Diode has a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 27 pF. It is used in applications requiring variable capacitance diodes with abrupt classification for tuning RF circuits.
LV2209 by Onsemi

LV2209

Onsemi

LV2209 by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It has a breakdown voltage of 25 V, making it suitable for RF tuning applications. With a max power dissipation of 0.28 W, this single-config diode in cylindrical package is ideal for high-frequency circuits.
MV2105ZL1 by Onsemi

MV2105ZL1

Onsemi

MV2105ZL1 by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Nominal Capacitance of 15pF, and Breakdown Voltage of 30V. It is ideal for RF tuning applications due to its Variable Capacitance nature and can operate at temperatures up to 150 °C.
BB142 by NXP Semiconductors

BB142

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;