NXP Semiconductors - BB174X

The Onsemi SVC344 is a varactor diode with 2 elements, common cathode configuration, and 430 pF nominal capacitance. It has a min breakdown voltage of 30 V and is ideal for applications requiring variable capacitance in RF circuits. The diode's plastic/epoxy package with cylindrical shape makes it suitable for bottom terminal position mounting.

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N4813 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.005 uA, and Nominal Diode Capacitance of 68 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;

MMVL809T1G by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and gull wing terminals for surface mount assembly.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 16 pF; Maximum Repetitive Peak Reverse Voltage: 10 V;

LV2205RLRM by Onsemi is a single varactor diode with a min quality factor of 400, ideal for applications requiring variable capacitance. With a nominal capacitance of 15 pF and a min breakdown voltage of 25 V, this diode operates at temperatures up to 150 °C, making it suitable for high-performance electronic circuits.

1N5682 by Onsemi is a Varactor Diode with a Min Quality Factor of 600, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 8.2 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TIV306 by Texas Instruments is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a nominal capacitance of 7 pF and breakdown voltage of 20 V, it offers high performance in RF tuning circuits. The diode's ceramic package and isolated case connection ensure reliable operation with a max power dissipation of 0.25 W.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB804TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal configuration and a min capacitance ratio of 1.65. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component enhances circuit performance in communication devices.

The Onsemi MV1650 is a single varactor diode with glass package, ideal for applications requiring variable capacitance. With a nominal capacitance of 100pF and min breakdown voltage of 20V, it operates b/w -65 °C to 200°C. Its isolated case connection and wire terminal form make it suitable for diverse electronic circuits.