NXP Semiconductors - BB181LX,315

2803 Varactor Diode by Api Technologies features a Min Quality Factor of 150, Nominal Capacitance of 10 pF, and Breakdown Voltage of 22 V. Ideal for applications in Very High Frequency to Ultra High Frequency bands due to its Variable Capacitance design and Silicon diode element material.

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

VARIABLE CAPACITANCE DIODE;

1N5695 by Onsemi is a varactor diode with 100pF capacitance, 45V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 10; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 14.95 pF; Maximum Repetitive Peak Reverse Voltage: 32 V;

The Onsemi 1N5449 Varactor Diode has a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 27 pF. It is used in applications requiring variable capacitance diodes with abrupt classification for tuning RF circuits.

MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Nominal Diode Capacitance: 21.26 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: 64 pF; Maximum Repetitive Peak Reverse Voltage: 33 V;

1N5694 by Onsemi is a varactor diode with 82pF nominal capacitance, abrupt variable capacitance classification, and 225 min quality factor. It is used in RF applications for tuning circuits due to its high-quality factor and low reverse current of 0.00000002uA. Operating temperature ranges from -65 °C to 175°C.

1N5467 by Onsemi is a Varactor Diode with a Min Quality Factor of 500, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMVL2101T1G by Onsemi is a varactor diode with 6.8pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF applications due to its variable capacitance property and small outline package style. Suitable for surface mount designs requiring high-frequency tuning capabilities.

MMBV2107L by Onsemi is a varactor diode with a min quality factor of 350, nominal capacitance of 22 pF, and breakdown voltage of 30 V. It is used in RF applications for frequency tuning due to its variable capacitance property.