NXP Semiconductors - BB181LX,315

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 15 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;

The Onsemi SVC321C is a Varactor Diode with a Min Quality Factor of 200, Max Reverse Current of 0.1uA, and Min Breakdown Voltage of 16V. It is ideal for applications requiring variable capacitance diodes in electronic circuits operating up to 100 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMVA1248-079LF by Skyworks Solutions is a single varactor diode with hyperabrupt classification. It operates in the ultra high frequency band, with a max reverse current of 0.02 uA. Ideal for applications requiring variable capacitance diodes in small outline packages at temperatures ranging from -55 to 125 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MV209ZL1 is a Varactor Diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for Very High Frequency applications due to its variable capacitance nature and operating temperature up to 125 °C.

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.

MMVL109T1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount assembly.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4808 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 27 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a max operating temperature of 150 °C.

The Onsemi SVC220 is a Varactor Diode with 2 elements, common cathode config, and 45.25 pF nominal capacitance. Ideal for RF applications due to its 16 V breakdown voltage and high quality factor of 100. Its small outline package makes it suitable for surface mount designs in various electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

MV104RL by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, it has a Max Operating Temperature of 125 °C and a Min Breakdown Voltage of 32V.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.