NXP Semiconductors - BB219TRL13

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 15; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20; Nominal Diode Capacitance: .225 pF;

Toshiba's 1SV285 Varactor Diode is a single-config, ultra-high frequency diode with a capacitance ratio of 2 and nominal capacitance of 4.45 pF. Ideal for applications requiring variable capacitance, such as in RF tuning circuits for small outline packages operating up to 125°C.

KVX2162-23-0/TR by Microchip: Varactor Diode with 10pF capacitance, 22V breakdown voltage, and 400 min quality factor. Ideal for VHF to L band applications due to hyperabrupt diode classification. Operates b/w -55°C to 125°C, suitable for surface mount designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V;

1N4806 by Onsemi is a Varactor Diode with 18pF capacitance, 99V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE;

LV2205RLRP by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for RF tuning applications due to its variable capacitance and high-quality factor performance at temperatures up to 150 °C.

Varactors;

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30;

The Onsemi SVC353T is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. Ideal for RF applications due to its variable capacitance diode type, 16V breakdown voltage, and small outline package style. Suitable for surface mount designs requiring high-quality factor components.