NXP Semiconductors - BC817DS

BC817DS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BC817DS
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .37 W; Maximum Collector Current (IC): .5 A;
Datasheet BC817DS Datasheet
In Stock127
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Maximum Power Dissipation (Abs): .37 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 45 V
Peak Reflow Temperature (C): 260
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