NXP Semiconductors - BC879,112

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BC879,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BC879,112
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
Datasheet BC879,112 Datasheet
In Stock209
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .8 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 2000
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Additional Features: BUILT-IN BIAS RESISTOR
Maximum VCEsat: 1.8 V
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