NXP Semiconductors - BCM61B,215

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BCM61B,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCM61B,215
Description NPN; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .39 W; Maximum Collector Current (IC): .1 A;
Datasheet BCM61B,215 Datasheet
In Stock16,241
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: CURRENT MIRROR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .39 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 200
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 45 V
Peak Reflow Temperature (C): 260
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