NXP Semiconductors - BCM62B,235

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BCM62B,235 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCM62B,235
Description PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): .39 W; Maximum Collector Current (IC): .1 A;
Datasheet BCM62B,235 Datasheet
In Stock1,291
NAME DESCRIPTION
Nominal Transition Frequency (fT): 175 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: CURRENT MIRROR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .39 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: .39 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 200
JESD-609 Code: e3
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 45 V
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
Maximum VCEsat: .4 V
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