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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BCM62B |
| Description | PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): .39 W; Maximum Collector Current (IC): .1 A; |
| Datasheet | BCM62B Datasheet |
| In Stock | 33 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 175 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | CURRENT MIRROR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | .39 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 200 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 45 V |
| Peak Reflow Temperature (C): | 260 |
