NXP Semiconductors - BCM856DS,125

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BCM856DS,125 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCM856DS,125
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;
Datasheet BCM856DS,125 Datasheet
In Stock3,047
NAME DESCRIPTION
Nominal Transition Frequency (fT): 175 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Reference Standard: AEC-Q101; IEC-60134
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