NXP Semiconductors - BCM857BV,115

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BCM857BV,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCM857BV,115
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet BCM857BV,115 Datasheet
In Stock6,697
NAME DESCRIPTION
Nominal Transition Frequency (fT): 175 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 200
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 45 V
Peak Reflow Temperature (C): 260
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