NXP Semiconductors - BCV61CT/R

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BCV61CT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCV61CT/R
Description NPN; Configuration: COMMON BASE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
Datasheet BCV61CT/R Datasheet
In Stock2,849
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: COMMON BASE, 2 ELEMENTS
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 420
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: FOR TRANSISTOR2 HFE IS 420
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum VCEsat: .6 V
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