Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BCV62BT/R |
| Description | PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; |
| Datasheet | BCV62BT/R Datasheet |
| In Stock | 190 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | CURRENT MIRROR |
| Transistor Element Material: | SILICON |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 220 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 30 V |
| Additional Features: | FOR TRANSISTOR2 HFE IS 220 |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .65 V |








