NXP Semiconductors - BCV64B,215

BCV64B,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BCV64B,215
Description PNP; Configuration: CASCADED, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
Datasheet BCV64B,215 Datasheet
In Stock3,504
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: CASCADED, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 220
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: .65 V
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Pricing (USD)

Qty. Unit Price Ext. Price
3,504 $0.076 $266.304

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