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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BD231 |
| Description | PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; |
| Datasheet | BD231 Datasheet |
| In Stock | 3,896 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 50 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 1.5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 12.5 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 12.5 W |
| JEDEC-95 Code: | TO-126 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 25 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 80 V |
| Maximum VCEsat: | .8 V |
