BDS61B by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BDS61B
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Case Connection: COLLECTOR; Maximum Turn On Time (ton): 2000 ns;
Datasheet	BDS61B Datasheet
In Stock	206

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	2000 ns
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	1000
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	8000 ns
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT-IN BIAS RESISTOR
Case Connection:	COLLECTOR

Pricing (USD)

Qty.	Unit Price	Ext. Price
206	-	-

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