NXP Semiconductors - BDS645-T

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BDS645-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BDS645-T
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Terminal Form: GULL WING; Terminal Position: DUAL;
Datasheet BDS645-T Datasheet
In Stock110
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 2000 ns
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 1000
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 10000 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR
Case Connection: COLLECTOR
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