NXP Semiconductors - BF1107TRL13

  1. Home
  2. NXP Semiconductors - BF1107TRL13
BF1107TRL13 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1107TRL13
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet BF1107TRL13 Datasheet
In Stock2,091
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .01 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 3 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,091 - -

Popular Products

Category Top Products

934055135215 by NXP Semiconductors

934055135215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; No. of Elements: 2;
BF992-TAPE-13 by NXP Semiconductors

BF992-TAPE-13

NXP Semiconductors

BF992-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in dual gate mode, and supports very high frequency bands. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
2N3819 by Allegro MicroSystems

2N3819

Allegro MicroSystems

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;
BF990AT/R by NXP Semiconductors

BF990AT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Minimum DS Breakdown Voltage: 18 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD57002-E by STMicroelectronics

PD57002-E

STMicroelectronics

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.
BF545ATRL by NXP Semiconductors

BF545ATRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Terminal Form: GULL WING;
BLP7G07S-140P by NXP Semiconductors

BLP7G07S-140P

NXP Semiconductors

RF Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
ATF-531P8-BLK by Agilent Technologies

ATF-531P8-BLK

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON;
FHX35X by Fujitsu

FHX35X

Fujitsu

Fujitsu's FHX35X is an N-CHANNEL RF FET for AMPLIFIER applications in KU BAND. With 8.5 dB Power Gain, it operates in DEPLETION MODE at 175 °C max temp. Featuring HIGH ELECTRON MOBILITY tech and GALLIUM ARSENIDE material, this SINGLE configuration transistor is a surface mount with 4 terminals.
BF999E6327HTSA1 by Infineon Technologies

BF999E6327HTSA1

Infineon Technologies

BF999E6327HTSA1 by Infineon Technologies is a RF Small Signal Field Effect Transistor (FET) with N-CHANNEL polarity. It operates in depletion mode and has a min DS breakdown voltage of 20V. This transistor is suitable for applications in the very high frequency band.
BF904-TAPE-13 by NXP Semiconductors

BF904-TAPE-13

NXP Semiconductors

BF904-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance in various electronic circuits.
3N204 by Texas Instruments

3N204

Texas Instruments

3N204 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 14dB Power Gain, ideal for AMPLIFIER applications. Operating in DUAL GATE, DEPLETION MODE, it offers 0.05A Drain Current and 0.36W Power Dissipation at 200°C. Package: METAL CYLINDRICAL with SOURCE AND SUBSTRATE connection.
BF245C by Motorola

BF245C

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-T3; Package Style (Meter): CYLINDRICAL;
J310-AMMO by NXP Semiconductors

J310-AMMO

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; Package Style (Meter): CYLINDRICAL; JEDEC-95 Code: TO-92;
J310 by Fairchild Semiconductor

J310

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 3;
CPH6904-TL-E by Onsemi

CPH6904-TL-E

Onsemi

CPH6904-TL-E by Onsemi is an N-CHANNEL RF FET with 0.7W power dissipation, 150°C max temp, and JUNCTION tech. Ideal for surface mount applications in electronics requiring high-frequency signal amplification.
934028850235 by NXP Semiconductors

934028850235

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; No. of Terminals: 4; Transistor Element Material: SILICON;
BF904-T by NXP Semiconductors

BF904-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2N4222 by NXP Semiconductors

2N4222

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: ROUND;
BF545AT/R by NXP Semiconductors

BF545AT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Finish: TIN; Field Effect Transistor Technology: JUNCTION;