BF1204T/R by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BF1204T/R
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BF1204T/R Datasheet
In Stock	3,511

NAME	DESCRIPTION
Minimum Power Gain (Gp):	21 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.03 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	10 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, ENHANCEMENT MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,511	-	-

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