NXP Semiconductors - BF1216,115

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BF1216,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1216,115
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): .03 A; Maximum Drain Current (ID): .03 A;
Datasheet BF1216,115 Datasheet
In Stock2,733
NAME DESCRIPTION
Other Names: NXPNXPBF1216,115
954-BF1216115
568-6159-6
568-6159-2
568-6159-1
934063997115
BF1216,115-ND
2156-BF1216115-NXTR
BF1216115
Maximum Power Dissipation (Abs): .18 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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