NXP Semiconductors - BF245A/2

  1. Home
  2. NXP Semiconductors - BF245A/2
BF245A/2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BF245A/2
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;
Datasheet BF245A/2 Datasheet
In Stock2,196
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,196 - -

Popular Products

Category Top Products

2N4401 by Secos

2N4401

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N3906 by Tt Electronics Plc

2N3906

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
TIP3055 by Philips Semiconductors

TIP3055

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
MMBT3906 by Vishay Intertechnology

MMBT3906

Vishay Intertechnology

Vishay Intertechnology's MMBT3906 is a PNP transistor with a max collector current of 0.2A and min DC current gain of 30. With a max power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for applications requiring high frequency operation such as signal amplification in electronic circuits.
BC807-40 by Kodenshi Auk

BC807-40

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
TIP120 by Jiangsu Changjiang Electronics Technology

TIP120

Jiangsu Changjiang Electronics Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP41C by Sinyork

TIP41C

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BS170 by Plessey Semiconductors Discrete Components Div

BS170

Plessey Semiconductors Discrete Components Div

Other Transistors;
BC847C by Jiangsu Changjiang Electronics Technology

BC847C

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BD139-10 by Motorola

BD139-10

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP117 by Philips Semiconductors

TIP117

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP50 by North American Philips Discrete Products Div

TIP50

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC548C by Shanghai Lunsure Electronic Technology

BC548C

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP31C by Transys Electronics

TIP31C

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP115 by Boca Semiconductor

TIP115

Boca Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
MPSA42 by Philips Semiconductors

MPSA42

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BD140 by Iskra Semic Capacitors Industry

BD140

Iskra Semic Capacitors Industry

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP122 by National Semiconductor

TIP122

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
TIP127 by National Semiconductor

TIP127

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2N3055- by General Electric Solid State

2N3055-

General Electric Solid State

2N3055- by General Electric Solid State is an NPN transistor with a max power dissipation of 115W and max collector current of 15A. With a min hFE of 20, it operates up to 200°C, making it ideal for high-power applications like amplifiers and power supplies.