NXP Semiconductors - BF423,116

  1. Home
  2. NXP Semiconductors - BF423,116
BF423,116 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BF423,116
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;
Datasheet BF423,116 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 60 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .8 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 250 V
Maximum Collector-Base Capacitance: 1.6 pF
Maximum VCEsat: .6 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817DS,115 by Nexperia

BC817DS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
BCY89 by Tt Electronics Plc

BCY89

Tt Electronics Plc

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Package Shape: ROUND;
BC817-40W-7 by Diodes Incorporated

BC817-40W-7

Diodes Incorporated

BC817-40W-7 by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a 0.2W power dissipation in a small outline package suitable for surface mount technology.
BC817-25 by Changzhou Galaxy Century Microelectronics

BC817-25

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
MMBT2907A by Diodes Incorporated

MMBT2907A

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC847BM,315 by NXP Semiconductors

BC847BM,315

NXP Semiconductors

BC847BM,315 by NXP Semiconductors is a NPN BJT transistor with 45V VCEO, 0.1A IC, and 200 hFE. Ideal for switching applications, it operates at up to 150°C and has a transition frequency of 100MHz. This chip carrier package features a plastic/epoxy body and tin finish.
2N3904 by Diotec Semiconductor Ag

2N3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
2N3904 by Renesas Technology

2N3904

Renesas Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
BC846BS,115 by Nexperia

BC846BS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 6;
BC847C,215 by NXP Semiconductors

BC847C,215

NXP Semiconductors

NXP Semiconductors' BC847C,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. This GULL WING terminal transistor has a max IC of 0.1A and VCE of 45V, ideal for small outline packages in electronics.
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Surge Components

BC817-40

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
MMBT2907ALT1G by Rochester Electronics

MMBT2907ALT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
JANTX2N2222AUA by Defense Logistics Agency

JANTX2N2222AUA

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; No. of Elements: 1;
MMBT2907A by Motorola

MMBT2907A

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMUN2211LT1G by Onsemi

MMUN2211LT1G

Onsemi

MMUN2211LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor operates up to 150°C and comes in a rectangular package suitable for surface mount assembly.
BC817-25-7-F by Diodes Incorporated

BC817-25-7-F

Diodes Incorporated

Diodes Inc's BC817-25-7-F is a NPN small signal BJT transistor with a max collector-emitter voltage of 45V and max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and fast nominal transition frequency of 100MHz.
2N2905A by Vishay Intertechnology

2N2905A

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Terminal Position: BOTTOM; No. of Elements: 1;
BC847B by Central Semiconductor

BC847B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;