NXP Semiconductors - BF556B-T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .04 A;

N-CHANNEL; Maximum Operating Temperature: 250 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

BF256ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.

MMBF5486D87Z by Onsemi is an N-CHANNEL RF FET with DEPLETION MODE operation. It operates in ULTRA HIGH FREQUENCY BAND, with PLASTIC/EPOXY package and GULL WING terminals. Ideal for SWITCHING applications due to its low 1 pF feedback capacitance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 18 V;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

NE3210S01 by Renesas Electronics is a N-CHANNEL FET for AMPLIFIER applications. Features include 12 dB Gp, 3 V DS Breakdown Voltage, and KU BAND frequency band. It has a SINGLE configuration with surface mount capability and operates in DEPLETION MODE.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-T3; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 2; Transistor Element Material: SILICON;

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): .8 pF; Terminal Form: WIRE; Field Effect Transistor Technology: JUNCTION;

BF556A,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 30V DS Breakdown Voltage and can handle up to 0.25W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and is designed for VERY HIGH FREQUENCY BAND usage.