NXP Semiconductors - BF821T/R

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BF821T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF821T/R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .05 A;
Datasheet BF821T/R Datasheet
In Stock1,983
NAME DESCRIPTION
Nominal Transition Frequency (fT): 60 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .31 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 300 V
Maximum Collector-Base Capacitance: 1.6 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .8 V
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