NXP Semiconductors - BF966A

  1. Home
  2. NXP Semiconductors - BF966A
BF966A by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BF966A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: O-PRDB-F4; Transistor Element Material: SILICON; Package Shape: ROUND;
Datasheet BF966A Datasheet
In Stock178
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Drain Current (ID): .03 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: DUAL GATE, DEPLETION MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
178 - -

Popular Products

Category Top Products

BFW10 by NXP Semiconductors

BFW10

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): .8 pF; Terminal Form: WIRE; Field Effect Transistor Technology: JUNCTION;
BLM7G1822S-20PBGY by Ampleon Netherlands B V

BLM7G1822S-20PBGY

Ampleon Netherlands B V

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BF256C by NXP Semiconductors

BF256C

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; JESD-30 Code: O-PBCY-T3;
BF998 by Vishay Semiconductors

BF998

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
BF998B-GS08 by Temic Semiconductors

BF998B-GS08

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;
FLL177ME by Eudyna Devices

FLL177ME

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1;
BFW10 by New Jersey Semiconductor Products

BFW10

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-72; Additional Features: LOW NOISE;
2N4416 by Asi Semiconductor

2N4416

Asi Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;
BF1204T/R by NXP Semiconductors

BF1204T/R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MPF102RLRP by Onsemi

MPF102RLRP

Onsemi

MPF102RLRP by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND and features a 3pF Crss. The transistor's SILICON element and TIN LEAD finish ensure reliable performance up to 125 °C.
CLF1G0060S-30U by NXP Semiconductors

CLF1G0060S-30U

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 250 Cel;
BF909R-TAPE-7 by NXP Semiconductors

BF909R-TAPE-7

NXP Semiconductors

BF909R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.
2N4416 by Thomson-csf Semiconductors

2N4416

Thomson-csf Semiconductors

N-CHANNEL; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; Terminal Position: BOTTOM; Qualification: Not Qualified;
PMBFJ309,215 by NXP Semiconductors

PMBFJ309,215

NXP Semiconductors

NXP Semiconductors' PMBFJ309,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Features include 25V DS Breakdown Voltage, VERY HIGH FREQUENCY BAND operation, and 2.5pF Crss feedback capacitance. The PLASTIC/EPOXY package with GULL WING terminals supports surface mount installation.
934002640235 by NXP Semiconductors

934002640235

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
TGF2023-2-01 by Qorvo

TGF2023-2-01

Qorvo

Qorvo's TGF2023-2-01 is an N-channel RF FET for amplifier applications in KU band. Featuring GaN technology, it operates in depletion mode with a max ID of 1.25A. This single-configured transistor is surface-mountable and has a rectangular package shape without leads.
BF909WR,115 by NXP Semiconductors

BF909WR,115

NXP Semiconductors

BF909WR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a PLASTIC/EPOXY package. It operates in DUAL GATE, ENHANCEMENT MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a max Drain Current of 0.04 A and a Breakdown Voltage of 7 V, it is ideal for high-frequency circuit designs.
BF256ARLRM by Onsemi

BF256ARLRM

Onsemi

BF256ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
CLF1G0035-100PU by Ampleon Netherlands B V

CLF1G0035-100PU

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 150 V; JESD-30 Code: R-CDFM-F4;
BF998E6327HTSA1 by Infineon Technologies

BF998E6327HTSA1

Infineon Technologies

BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.