NXP Semiconductors - BFG197W/XR

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BFG197W/XR by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG197W/XR
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet BFG197W/XR Datasheet
In Stock2,687
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 10 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE, HIGH RELIABILITY
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
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