NXP Semiconductors - BFG425WT/R

BFG425WT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG425WT/R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;
Datasheet BFG425WT/R Datasheet
In Stock10
NAME DESCRIPTION
Nominal Transition Frequency (fT): 25000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .03 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .135 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Maximum Power Dissipation Ambient: .135 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4.5 V
Additional Features: LOW NOISE
Peak Reflow Temperature (C): 260
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