NXP Semiconductors - BFG541T/R

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BFG541T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG541T/R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .12 A;
Datasheet BFG541T/R Datasheet
In Stock1,294
NAME DESCRIPTION
Nominal Transition Frequency (fT): 9000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .12 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .65 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: .65 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e3
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, LOW NOISE
Peak Reflow Temperature (C): 260
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