NXP Semiconductors - BFG90A

  1. Home
  2. NXP Semiconductors - BFG90A
BFG90A by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG90A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Terminal Form: FLAT;
Datasheet BFG90A Datasheet
In Stock4,383
NAME DESCRIPTION
Nominal Transition Frequency (fT): 5000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .025 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: CECC
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,383 - -

Popular Products

Category Top Products

2N3866 by International Diode

2N3866

International Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
KSC1730O by Onsemi

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.
BFS481H6327XTSA1 by Infineon Technologies

BFS481H6327XTSA1

Infineon Technologies

Infineon's BFS481H6327XTSA1 is a NPN BJT transistor with 2 elements, ideal for amplifier applications in L Band frequencies. With max. collector-emitter voltage of 12V and fT of 8000MHz, it offers high performance in a small outline package. This surface-mount device has Gull Wing terminals and meets AEC-Q101 standard.
MPSH10RL1 by Onsemi

MPSH10RL1

Onsemi

MPSH10RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It has a max Vce of 25V and fT of 650MHz, making it suitable for ultra-high frequency applications in cylindrical packages.
15GN03CA-TB-E by Onsemi

15GN03CA-TB-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
MPS918RLRA by Onsemi

MPS918RLRA

Onsemi

MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.
AT-42035G by Agilent Technologies

AT-42035G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .08 A;
SD1080-2 by STMicroelectronics

SD1080-2

STMicroelectronics

NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);
BFM520,115 by NXP Semiconductors

BFM520,115

NXP Semiconductors

NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.
BFR92PE6327 by Infineon Technologies

BFR92PE6327

Infineon Technologies

BFR92PE6327 by Infineon Technologies is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 5000 MHz and can handle a collector current of 0.03 A, making it ideal for L Band switching applications. This surface mount transistor comes in a small outline package with gull wing terminals.
BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.
2N3866 by Advanced Power Technology

2N3866

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
BFS17 by Temic Semiconductors

BFS17

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
NESG260234-T1 by Nec Electronics

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BFS17W by Siemens

BFS17W

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Package Style (Meter): SMALL OUTLINE;
MMBTH81_NL by Fairchild Semiconductor

MMBTH81_NL

Fairchild Semiconductor

MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.
HFA3102BZ by Renesas Electronics

HFA3102BZ

Renesas Electronics

The Renesas Electronics HFA3102BZ is an NPN RF BJT transistor with a max fT of 10GHz. It has 14 terminals, operates in the UHF band, and is used for amplifier applications. The package is small outline, surface mountable, with a max operating temp of 85°C.
JANTXV2N2907AUBC by Vpt Components

JANTXV2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-CDSO-N3; Maximum Operating Temperature: 200 Cel;
2SC5066-O,LF by Toshiba

2SC5066-O,LF

Toshiba

Toshiba's 2SC5066-O,LF is an NPN RF BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.03 A and hFE of 80, suitable for amplifier applications in the UHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.
BFP405H6327XTSA1 by Infineon Technologies

BFP405H6327XTSA1

Infineon Technologies

BFP405H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.025A IC, and 25000MHz fT. Ideal for L Band applications, it features a small outline package with Gull Wing terminals for surface mount amplification needs.