Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BFQ251T/R |
| Description | PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Maximum Collector-Emitter Voltage: 65 V; |
| Datasheet | BFQ251T/R Datasheet |
| In Stock | 3,335 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 1300 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .3 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 1 W |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 20 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 65 V |
| Additional Features: | HIGH RELIABILITY |
| Maximum Collector-Base Capacitance: | 2 pF |
| Reference Standard: | CECC |
