NXP Semiconductors - BFR92A/A2,235

  1. Home
  2. NXP Semiconductors - BFR92A/A2,235
BFR92A/A2,235 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFR92A/A2,235
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A; Maximum Operating Temperature: 150 Cel;
Datasheet BFR92A/A2,235 Datasheet
In Stock4,560
NAME DESCRIPTION
Maximum Collector Current (IC): .025 A
Maximum Power Dissipation (Abs): .3 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 65
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,560 - -

Popular Products

Category Top Products

BC817-25 by Itt Components

BC817-25

Itt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP122 by Silicon Group

TIP122

Silicon Group

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2010 by Acrian

2010

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.5 A; No. of Elements: 1;
BC846B by Itt Components

BC846B

Itt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP122 by Philips Semiconductors

TIP122

Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BC337-40 by Shanghai Lunsure Electronic Technology

BC337-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
TIP110 by Mospec Semiconductor

TIP110

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP35C by Tt Electronics Plc

TIP35C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BDX53C by Harris Semiconductor

BDX53C

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP125 by Jiangsu Changjiang Electronics Technology

TIP125

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
BC856B by Plessey Semiconductors Discrete Components Div

BC856B

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-16 by Vishay Intertechnology

BC817-16

Vishay Intertechnology

BC817-16 by Vishay Intertechnology is an NPN transistor with a max power dissipation of 0.33W and a min DC current gain of 100. It is suitable for surface mount applications and can handle a max collector current of 0.5A.
JANTX2N3055 by Hi-rel Components

JANTX2N3055

Hi-rel Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
MMBT3906 by Philips Semiconductors

MMBT3906

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
TIP111 by Asi Semiconductor

TIP111

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
TIP42C by Boca Semiconductor

TIP42C

Boca Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055H by Usha

2N3055H

Usha

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC847 by Plessey Semiconductors Discrete Components Div

BC847

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP35C by Mospec Semiconductor

TIP35C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;