NXP Semiconductors - BFS20-T

  1. Home
  2. NXP Semiconductors - BFS20-T
BFS20-T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFS20-T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Collector Current (IC): .025 A; Package Style (Meter): SMALL OUTLINE;
Datasheet BFS20-T Datasheet
In Stock1,509
NAME DESCRIPTION
Nominal Transition Frequency (fT): 350 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .025 A
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 1 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,509 - -

Popular Products

Category Top Products

BFR93ARGELB-GS08 by Vishay Semiconductors

BFR93ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;
CA3083M96 by Renesas Electronics

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.
MMBTH10 by Onsemi

MMBTH10

Onsemi

MMBTH10 by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It's a single configuration amplifier in a small outline package, suitable for ultra-high frequency applications. With a max operating temp of 150°C and Pdiss of 0.225W, it's ideal for high-frequency circuit designs.
BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.
HFA3101BZ by Renesas Electronics

HFA3101BZ

Renesas Electronics

HFA3101BZ by Renesas Electronics is an NPN RF BJT transistor with a max fT of 10GHz. It is used as an amplifier in the ultra-high frequency band, featuring a max operating temp of 150°C and max collector-emitter voltage of 8V. This complex-configured transistor has 6 elements, 8 terminals, and comes in a small outline package with gull wing terminals.
2SC4915-O,LF(B by Toshiba

2SC4915-O,LF(B

Toshiba

2SC4915-O,LF(B by Toshiba is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 17 dB and operates in the very high frequency band up to 550 MHz. With a max collector-emitter voltage of 30V and dual terminal position, it is suitable for small outline surface mount designs.
BSX28 by STMicroelectronics

BSX28

STMicroelectronics

BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.
2SA1857 by Onsemi

2SA1857

Onsemi

The Onsemi 2SA1857 is a PNP RF BJT transistor with VCEsat of 0.3V, hFE of 60, and fT of 750MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector-emitter voltage of 12V.
TIS126 by Texas Instruments

TIS126

Texas Instruments

TIS126 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 600MHz. It is commonly used as an amplifier in the very high-frequency band applications due to its 0.4W power dissipation capability and SILICON element material.
15GN01MA-TL-E by Onsemi

15GN01MA-TL-E

Onsemi

The Onsemi 15GN01MA-TL-E is an NPN RF BJT with a max power dissipation of 0.4W, hFE of 200, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.05A in surface-mount configurations at temperatures up to 150 °C.
50A02CH-TL-H by Onsemi

50A02CH-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;
2N3643 by Semitronics

2N3643

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
2N4429 by STMicroelectronics

2N4429

STMicroelectronics

2N4429 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 5W and a nominal transition frequency of 700 MHz. It operates in the ultra-high frequency band with a max temp of 200 °C. Its flat, round package ensures efficient mounting.
MMBTH10LT3G by Onsemi

MMBTH10LT3G

Onsemi

MMBTH10LT3G by Onsemi is an NPN RF BJT with a max fT of 650 MHz, hFE of 60, and VCEO of 25V. Ideal for UHF applications due to its small outline package and high transition frequency. Suitable for surface mount designs requiring ultra-high frequency band performance.
BFR93A by NXP Semiconductors

BFR93A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;
MMBT5179 by National Semiconductor

MMBT5179

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
2SC5490A-TL-H by Onsemi

2SC5490A-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
MMBTH24 by Onsemi

MMBTH24

Onsemi

MMBTH24 by Onsemi is a NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 400MHz. It's used in amplifier applications, operates at -55 to 150 °C, and has a max power dissipation of 0.225W.
HFA3096BZ96 by Intersil

HFA3096BZ96

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
934047460135 by NXP Semiconductors

934047460135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;