NXP Semiconductors - BFU580Q

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BFU580Q by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU580Q
Description RF Small Signal Bipolar Transistors;
Datasheet BFU580Q Datasheet
In Stock464
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2N2907A by Vpt Components

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NSVF4009SG4T1G by Onsemi

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START420TR by STMicroelectronics

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;
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Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BFM520,115 by NXP Semiconductors

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NXP Semiconductors

NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.
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RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
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STMicroelectronics

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BFG425WT/R by NXP Semiconductors

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NXP Semiconductors

NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.
NTE2402 by Nte Electronics

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Integrated Device Technology

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Onsemi

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