BFU725F,115 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BFU725F,115
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A;
Datasheet	BFU725F,115 Datasheet
In Stock	862

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	70000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.04 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM
Transistor Application:	AMPLIFIER
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	300
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.136 W
Maximum Collector-Emitter Voltage:	2.8 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	LOW NOISE
Highest Frequency Band:	C BAND
Case Connection:	EMITTER

Pricing (USD)

Qty.	Unit Price	Ext. Price
862	-	-

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