NXP Semiconductors - BFU725F/N1,115

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BFU725F/N1,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU725F/N1,115
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
Datasheet BFU725F/N1,115 Datasheet
In Stock7,735
NAME DESCRIPTION
Other Names: 954-BFU725F/N1115
BFU725FN1115
568-5111-6
934063513115
NXPNXPBFU725F/N1,115
BFU725F/N1,115-ND
2156-BFU725F/N1,115
568-5111-1
568-5111-2
Maximum Collector Current (IC): .04 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON GERMANIUM
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 160
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .136 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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