NXP Semiconductors - BGA2012T/R

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BGA2012T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA2012T/R
Description NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Construction: COMPONENT; Terminal Finish: Tin (Sn); Gain: 14 dB;
Datasheet BGA2012T/R Datasheet
In Stock1,088
NAME DESCRIPTION
Construction: COMPONENT
Characteristic Impedance: 50 ohm
RF or Microwave Device Type: NARROW BAND LOW POWER
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Gain: 14 dB
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