NXP Semiconductors - BGA2748T/R

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC441LH5TR is a GAAS RF amplifier with 12 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current draw of 115mA. Ideal for wideband medium-power applications, this surface-mount device offers reliable performance in RF and microwave systems.

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Maximum Operating Frequency: 3500 MHz; Maximum Voltage Standing Wave Ratio: 2; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Gain: 20 dB;

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Analog Devices' HMC8411LP2FE is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it is ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Broadcom's MSA-1105-TR1 is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. This component features a plastic/epoxy package body, surface mounting feature, and operates at 5.5V with a max supply current of 70mA.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

The Mini-circuits ERA-2SM+ is a wide band low power RF amplifier with 11.9 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 15 dBm input power, and has a VSWR of 1.6. Ideal for RF & microwave applications requiring compact surface mount components.

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.