NXP Semiconductors - BGA2776

  1. Home
  2. NXP Semiconductors - BGA2776
BGA2776 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA2776
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Power Supplies (V): 5;
Datasheet BGA2776 Datasheet
In Stock3,099
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1000 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 6
Maximum Input Power (CW): 10 dBm
Package Equivalence Code: TSSOP6,.08
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 2000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 23.2 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,099 - -

Popular Products

Category Top Products

PMA3-83LNW+ by Mini-circuits

PMA3-83LNW+

Mini-circuits

PMA3-83LNW+ by Mini-circuits is a wide band low power RF amplifier with a gain of 16.9 dB. It operates at frequencies ranging from 400 MHz to 8000 MHz and has a max input power of 16 dBm. This amplifier is commonly used in applications requiring amplification in the RF and microwave range.
MGA-72543-TR1 by Hewlett Packard

MGA-72543-TR1

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;
M57706L by Mitsubishi Electric

M57706L

Mitsubishi Electric

The Mitsubishi Electric M57706L is a RF & Microwave Amplifier module with 26 dBm CW input power, 4 VSWR, and operates b/w 135-145 MHz. It features hybrid technology, 50 ohm impedance, and is designed for narrow band high power applications in temperatures ranging from -30 to 110°C.
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
CMPA2060035F by Wolfspeed

CMPA2060035F

Wolfspeed

WIDE BAND HIGH POWER;
AMMP-6220 by Agilent Technologies

AMMP-6220

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;
AMMP-6220-TR1 by Agilent Technologies

AMMP-6220-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;
MAAM28000-A1G by TE Connectivity

MAAM28000-A1G

TE Connectivity

MAAM28000-A1G by TE Connectivity is a GAAS RF amplifier with 10V power supply, 8 terminals, and max operating temp of 100°C. Its ceramic package body material and surface mounting feature make it ideal for high-frequency applications in telecommunications and radar systems.
NPA1003QAR by Nitronex

NPA1003QAR

Nitronex

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;
ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
TGA4521 by Qorvo

TGA4521

Qorvo

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
HMC797LP5ETR by Hittite Microwave

HMC797LP5ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 10;
SGA-2463Z by Sirenza Microdevices

SGA-2463Z

Sirenza Microdevices

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
BGA612H6327XTSA1 by Infineon Technologies

BGA612H6327XTSA1

Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.
MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;
RA07H4047M-501 by Mitsubishi Electric

RA07H4047M-501

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-501 is a 50 ohm hybrid module with narrow band high power RF/Microwave device type. It offers 25.22 dB gain, operates b/w 400-470 MHz frequencies, and handles up to 14.77 dBm input power. Ideal for applications requiring high-power amplification in the RF & Microwave domain.
HMC441LC3B by Hittite Microwave

HMC441LC3B

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;
TGA2578 by Qorvo

TGA2578

Qorvo

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.