NXP Semiconductors - BGA2802,115

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn) - annealed;

HMC1087 by Analog Devices is a wide band medium power RF amplifier with 10 dB gain. It operates b/w 2-20 GHz, handles up to 34 dBm CW input power, and has a VSWR of 4. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

Qorvo's RDA1005LSR is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;

GALI-21 by Mini-circuits is a wide band low power RF amplifier with 11.5 dB gain, operating from 0 to 8000 MHz. It can handle up to 15 dBm CW input power and has a VSWR of 2.5, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -45°C to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

WIDE BAND HIGH POWER;

NARROW BAND LOW POWER;

HMC8413LP2FE by Analog Devices is a PHEMT RF amplifier with 17 dB gain, operating from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, suitable for wideband medium power applications. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it is ideal for RF and microwave systems requiring high performance in a small form factor.

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.