NXP Semiconductors - BGA3023Y

  1. Home
  2. NXP Semiconductors - BGA3023Y
BGA3023Y by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA3023Y
Description WIDE BAND MEDIUM POWER;
Datasheet BGA3023Y Datasheet
In Stock3,636
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,636 - -

Popular Products

Category Top Products

SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MSA-0686-BLKG by Broadcom

MSA-0686-BLKG

Broadcom

Broadcom's MSA-0686-BLKG is a wide band low power RF amplifier with 16.5 dB gain, operating from 0 to 800 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for surface mount applications in RF & microwave systems. The component features a matte tin finish, operates at 3.5V with a supply current of 20 mA, and has a characteristic impedance of 50 ohms.
HMC327MS8G by Hittite Microwave

HMC327MS8G

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
HMC963LC4TR by Hittite Microwave

HMC963LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.
HMC516LC5TR by Hittite Microwave

HMC516LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.
MAX2630EUS-T by Maxim Integrated

MAX2630EUS-T

Maxim Integrated

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.
AC1226 by Teledyne Cougar

AC1226

Teledyne Cougar

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
MGA-545P8-TR1 by Broadcom

MGA-545P8-TR1

Broadcom

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.
HMC499LC4TR by Analog Devices

HMC499LC4TR

Analog Devices

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
MSA-1105-TR1G by Broadcom

MSA-1105-TR1G

Broadcom

Broadcom's MSA-1105-TR1G is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. The component features surface mounting and operates at a supply voltage of 5.5V with a current draw of 70mA.
NBB-310-T1 by Qorvo

NBB-310-T1

Qorvo

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
MAX2643EXT-T by Maxim Integrated

MAX2643EXT-T

Maxim Integrated

MAX2643EXT-T by Maxim Integrated is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within specified frequency range.