NXP Semiconductors - BGA7124

  1. Home
  2. NXP Semiconductors - BGA7124
BGA7124 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA7124
Description WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Gain: 14.5 dB;
Datasheet BGA7124 Datasheet
In Stock83
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 400 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Minimum Operating Temperature: -40 Cel
Gain: 14.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
83 - -

Popular Products

Category Top Products

A64 by Wj Communications

A64

Wj Communications

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;
HMC499LC4TR by Analog Devices

HMC499LC4TR

Analog Devices

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
NBB-400-SR by Rf Micro Devices

NBB-400-SR

Rf Micro Devices

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
TGA2622-CP by Qorvo

TGA2622-CP

Qorvo

WIDE BAND HIGH POWER;
HMC463LP5ETR by Analog Devices

HMC463LP5ETR

Analog Devices

HMC463LP5ETR by Analog Devices is a wide band low power RF amplifier with a gain of 8 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 18 dBm. This surface mount component is commonly used in RF and microwave applications.
PMA3-14LN+ by Mini-circuits

PMA3-14LN+

Mini-circuits

The Mini-circuits PMA3-14LN+ is a wide band low power RF amplifier with 20.3 dB gain, operating from 50 MHz to 10 GHz. It has a max input power of 12 dBm and VSWR of 1.22, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
MAX2630EUS+T by Analog Devices

MAX2630EUS+T

Analog Devices

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.
XP1039-QJ-0G0T by M/a-com Technology Solutions

XP1039-QJ-0G0T

M/a-com Technology Solutions

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
TQP3M9037 by Triquint Semiconductor

TQP3M9037

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;
HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
HMC478MP86 by Hittite Microwave

HMC478MP86

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
XF1001-SC-0G0T by M/a-com Technology Solutions

XF1001-SC-0G0T

M/a-com Technology Solutions

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;
QPA9121SR by Qorvo

QPA9121SR

Qorvo

Qorvo's QPA9121SR is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact surface mount package and low supply current of 130mA at 5V, it offers high performance in RF & microwave systems.