NXP Semiconductors - BGE884

  1. Home
  2. NXP Semiconductors - BGE884
BGE884 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGE884
Description WIDE BAND LOW POWER; Maximum Input Power (CW): 16.25 dBm; Construction: MODULE; Minimum Operating Frequency: 40 MHz; Additional Features: LOWNOISE; Maximum Operating Temperature: 100 Cel;
Datasheet BGE884 Datasheet
In Stock161
NAME DESCRIPTION
Construction: MODULE
Maximum Input Power (CW): 16.25 dBm
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOWNOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 860 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
161 - -

Popular Products

Category Top Products

MGA-86576-STR by Agilent Technologies

MGA-86576-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
SBB-5089Z by Sirenza Microdevices

SBB-5089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.
HMC1040LP3CETR by Hittite Microwave

HMC1040LP3CETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;
A33 by M/a-com

A33

M/a-com

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; No. of Functions: 1; Package Equivalence Code: CAN4,.3; Maximum Supply Current: 16 mA;
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
LEE-29+ by Mini-circuits

LEE-29+

Mini-circuits

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.
SGA6286Z by Qorvo

SGA6286Z

Qorvo

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.
MSA-1105-STR by Agilent Technologies

MSA-1105-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;
HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
NBB-400-T1 by Qorvo

NBB-400-T1

Qorvo

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
MAAL-010704-TR3000 by M/a-com Technology Solutions

MAAL-010704-TR3000

M/a-com Technology Solutions

MAAL-010704-TR3000 by M/a-com Technology Solutions is a GAAS RF amplifier with 10dB gain, operating from 100MHz to 3500MHz. It has a max input power of 24dBm and operates on 3/5V supplies. Ideal for wideband low-power applications requiring surface mount construction.
MGA-72543-BLK by Hewlett Packard

MGA-72543-BLK

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Gain: 9.2 dB; Characteristic Impedance: 50 ohm;
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
MAAL-011141-000PPR by M/a-com Technology Solutions

MAAL-011141-000PPR

M/a-com Technology Solutions

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
HMC816LP4ETR by Analog Devices

HMC816LP4ETR

Analog Devices

Analog Devices' HMC816LP4ETR is a GAAS technology RF amplifier with 2 functions, 24 terminals, and operates at temperatures from -40 to 85°C. It has a power supply of 5V and max supply current of 126mA. Ideal for wideband low-power RF or microwave applications due to its surface mount package body material made of plastic/epoxy.