NXP Semiconductors - BGR69

  1. Home
  2. NXP Semiconductors - BGR69
BGR69 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGR69
Description NARROW BAND HIGH POWER; Gain: 34.5 dB; Maximum Operating Temperature: 100 Cel; Minimum Operating Frequency: 5 MHz; Maximum Operating Frequency: 65 MHz; Characteristic Impedance: 75 ohm;
Datasheet BGR69 Datasheet
In Stock162
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 5 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 65 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 34.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
162 - -

Popular Products

Category Top Products

SGA6286Z by Qorvo

SGA6286Z

Qorvo

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
MGA-82563-TR1G by Broadcom

MGA-82563-TR1G

Broadcom

Broadcom's MGA-82563-TR1G is a GAAS RF amplifier with 8.8dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates b/w -40°C to 85°C.
MW7IC2750NBR1 by Freescale Semiconductor

MW7IC2750NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
HMC608LC4 by Analog Devices

HMC608LC4

Analog Devices

HMC608LC4 by Analog Devices is a wide band medium power RF amplifier with 27 dB gain. It operates b/w 9500-11500 MHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC475ST89E by Analog Devices

HMC475ST89E

Analog Devices

HMC475ST89E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in the temperature range of -40°C to 85°C.
TGA2958-SM by Qorvo

TGA2958-SM

Qorvo

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.
CMD192C5 by Qorvo

CMD192C5

Qorvo

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
CA70-2 by M/a-com Technology Solutions

CA70-2

M/a-com Technology Solutions

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.
HMC453ST89ETR by Analog Devices

HMC453ST89ETR

Analog Devices

HMC453ST89ETR by Analog Devices is a wide band medium power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is surface mountable. This amplifier is commonly used in RF and microwave applications.
AD8350ARMZ15-REEL7 by Analog Devices

AD8350ARMZ15-REEL7

Analog Devices

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
SGA3363ZSR by Qorvo

SGA3363ZSR

Qorvo

SGA3363ZSR by Qorvo is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. Operating from 0 to 5500 MHz, it has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact package.
HMC505LP4 by Hittite Microwave

HMC505LP4

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;
MGA-86576-TR1 by Hewlett Packard

MGA-86576-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 8000 MHz; Construction: COMPONENT; Gain: 20 dB;
HMC998A by Analog Devices

HMC998A

Analog Devices

Analog Devices' HMC998A is a wide band medium power RF amplifier with 12 dB gain, operating from 0 to 22000 MHz. It can handle up to 27 dBm CW input power and has a max VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.
ERA-5SM+ by Mini-circuits

ERA-5SM+

Mini-circuits

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.
HMC636ST89TR by Hittite Microwave

HMC636ST89TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;