NXP Semiconductors - BGS8H2X

Broadcom's MGA-81563-BLKG is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems requiring surface mount components.

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

WIDE BAND LOW POWER;

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.

WIDE BAND LOW POWER;

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

NXP Semiconductors' BGA2815,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and 21.1mA max supply current. It comes in a plastic/epoxy package and features tin terminal finish for surface mount applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Maximum Supply Current: 38 mA; Power Supplies (V): 15; Maximum Operating Temperature: 50 Cel;

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;

Analog Devices' MAX2640EUT+T is a wideband low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for applications requiring surface mount construction in RF & microwave systems.