NXP Semiconductors - BGU8052,118

  1. Home
  2. NXP Semiconductors - BGU8052,118
BGU8052,118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGU8052,118
Description WIDE BAND LOW POWER;
Datasheet BGU8052,118 Datasheet
In Stock397
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
397 - -

Popular Products

Category Top Products

HMC963LC4 by Analog Devices

HMC963LC4

Analog Devices

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.
MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.
MGA-62563-TR1 by Agilent Technologies

MGA-62563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 3000 MHz;
HMC326MS8GETR by Analog Devices

HMC326MS8GETR

Analog Devices

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
RF3827 by Rf Micro Devices

RF3827

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HMC797LP5ETR by Hittite Microwave

HMC797LP5ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 10;
HMC478MP86TR by Analog Devices

HMC478MP86TR

Analog Devices

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.
ABA-52563-BLKG by Broadcom

ABA-52563-BLKG

Broadcom

Broadcom's ABA-52563-BLKG is a RF amplifier with 20dB gain, 1.4 VSWR, and 3500 MHz max frequency. Ideal for wideband low power applications, it operates at 5V with a max input power of 20 dBm. This component has a characteristic impedance of 50 ohms and is designed for surface mount installation.
MAX2659ELT+T by Maxim Integrated

MAX2659ELT+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;
SPF-5043Z by Sirenza Microdevices

SPF-5043Z

Sirenza Microdevices

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.
XL1000-BD-000V by Mimix Broadband

XL1000-BD-000V

Mimix Broadband

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;
NBB-310-T1 by Qorvo

NBB-310-T1

Qorvo

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.
MGA-87563-BLKG by Agilent Technologies

MGA-87563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.8;
ERA-50SM+ by Mini-circuits

ERA-50SM+

Mini-circuits

ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.
ADL5521ACPZ-R7 by Analog Devices

ADL5521ACPZ-R7

Analog Devices

ADL5521ACPZ-R7 by Analog Devices is a wide band low power RF amplifier with a gain of 10.5 dB, operating frequency range from 400 MHz to 4000 MHz, and max input power of 20 dBm. It is constructed using GaAs technology, has a characteristic impedance of 50 ohm, and is suitable for applications requiring high-frequency amplification in RF and microwave systems.
HMC8411LP2FE by Analog Devices

HMC8411LP2FE

Analog Devices

Analog Devices' HMC8411LP2FE is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it is ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
TSS-53LNB+ by Mini-circuits

TSS-53LNB+

Mini-circuits

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;
HMC902LP3E by Analog Devices

HMC902LP3E

Analog Devices

HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.