NXP Semiconductors - BGU8061

  1. Home
  2. NXP Semiconductors - BGU8061
BGU8061 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGU8061
Description NARROW BAND LOW POWER;
Datasheet BGU8061 Datasheet
In Stock8,253
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
8,253 - -

Popular Products

Category Top Products

HMC636ST89E by Analog Devices

HMC636ST89E

Analog Devices

Analog Devices' HMC636ST89E is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 85°C.
CMPA801B025F-TB by Wolfspeed

CMPA801B025F-TB

Wolfspeed

WIDE BAND HIGH POWER;
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
MGA-565P8-BLK by Agilent Technologies

MGA-565P8-BLK

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 3500 MHz; Maximum Voltage Standing Wave Ratio: 2; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Gain: 20 dB;
SGA-3563 by Sirenza Microdevices

SGA-3563

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC694LP4ETR by Hittite Microwave

HMC694LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
MGA-87563-BLKG by Broadcom

MGA-87563-BLKG

Broadcom

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.
MMG15241HT1 by Freescale Semiconductor

MMG15241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;
ADL5544ARKZ-R7 by Analog Devices

ADL5544ARKZ-R7

Analog Devices

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.
SPF5122ZSR by Rf Micro Devices

SPF5122ZSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
SMA70-2 by M/a-com Technology Solutions

SMA70-2

M/a-com Technology Solutions

WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;
BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.
SGA-2463Z by Sirenza Microdevices

SGA-2463Z

Sirenza Microdevices

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MGA-81563 by Agilent Technologies

MGA-81563

Agilent Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
MAX2839ETN+ by Maxim Integrated

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
ALM-1412-BLKG by Broadcom

ALM-1412-BLKG

Broadcom

ALM-1412-BLKG by Broadcom is a GAAS RF amplifier with 11dB gain, operating from 0-1575MHz. It has a max input power of 15dBm and requires 1/2.85V supply. Ideal for wideband low-power applications due to its 50Ω impedance and plastic/epoxy package construction.
TGA2622-CP by Qorvo

TGA2622-CP

Qorvo

WIDE BAND HIGH POWER;
PGA-102+ by Mini-circuits

PGA-102+

Mini-circuits

The Mini-circuits PGA-102+ is a wide band low power RF amplifier with 14.4 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it suitable for various RF and microwave applications requiring amplification in the frequency range of 50-6000 MHz.
HMC441LP3 by Hittite Microwave

HMC441LP3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.