NXP Semiconductors - BGY112A

BGY112A by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY112A
Description NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 88 MHz; Maximum Input Power (CW): 3 dBm; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2;
Datasheet BGY112A Datasheet
In Stock116
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Maximum Input Power (CW): 3 dBm
Minimum Operating Frequency: 68 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 88 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
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