NXP Semiconductors - BGY113E

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BGY113E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY113E
Description NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; Maximum Input Power (CW): 7 dBm; Maximum Operating Temperature: 90 Cel;
Datasheet BGY113E Datasheet
In Stock98
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Maximum Input Power (CW): 7 dBm
Minimum Operating Frequency: 400 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 440 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 35.5 dB
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