NXP Semiconductors - BGY114A

  1. Home
  2. NXP Semiconductors - BGY114A
BGY114A by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY114A
Description NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;
Datasheet BGY114A Datasheet
In Stock1,381
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Maximum Input Power (CW): 4.77 dBm
Minimum Operating Frequency: 824 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 849 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 37.8 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,381 - -

Popular Products

Category Top Products

CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.
A64 by Wj Communications

A64

Wj Communications

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;
TGA2526 by Qorvo

TGA2526

Qorvo

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.
HMC634LC4 by Analog Devices

HMC634LC4

Analog Devices

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
MAAM-011112-TR0500 by M/a-com Technology Solutions

MAAM-011112-TR0500

M/a-com Technology Solutions

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.
MGA-72543-TR1 by Broadcom

MGA-72543-TR1

Broadcom

Broadcom's MGA-72543-TR1 is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, operates at temperatures from -40°C to 85°C, and requires a 3V power supply.
CMPA2060035F by Wolfspeed

CMPA2060035F

Wolfspeed

WIDE BAND HIGH POWER;
MGA-72543-TR1 by Hewlett Packard

MGA-72543-TR1

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;
XB1007-QT-0G0T by Mimix Broadband

XB1007-QT-0G0T

Mimix Broadband

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Gain: 23 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
HMC1040LP3CE by Analog Devices

HMC1040LP3CE

Analog Devices

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.
SPF5122ZSR by Rf Micro Devices

SPF5122ZSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-81563 by Agilent Technologies

MGA-81563

Agilent Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
HMC441LM1 by Hittite Microwave

HMC441LM1

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;
MGA-81563-BLKG by Agilent Technologies

MGA-81563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-62563-BLKG by Broadcom

MGA-62563-BLKG

Broadcom

Broadcom's MGA-62563-BLKG is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, matte tin terminals, and requires 3-5V power supply at 77 mA.
NPA1003QAR by M/a-com Technology Solutions

NPA1003QAR

M/a-com Technology Solutions

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Power Supplies (V): 28;
HMC499LC4TR by Hittite Microwave

HMC499LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
HMC311ST89TR by Analog Devices

HMC311ST89TR

Analog Devices

Analog Devices' HMC311ST89TR is a wide band low power RF amplifier with 5V supply, operating from -40 to 85°C. It features bipolar technology, surface mount package, and draws max 74mA current. Ideal for RF & microwave applications requiring compact amplification solutions.
CMD264P3 by Qorvo

CMD264P3

Qorvo

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.