NXP Semiconductors - BLA6H0912L-1000U

  1. Home
  2. NXP Semiconductors - BLA6H0912L-1000U
BLA6H0912L-1000U by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6H0912L-1000U
Description N-CHANNEL; Maximum Operating Temperature: 225 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLA6H0912L-1000U Datasheet
In Stock3,007
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,007 $868.690 $2,612,150.830

Popular Products

Category Top Products

NVTFS5116PLTWG by Onsemi

NVTFS5116PLTWG

Onsemi

NVTFS5116PLTWG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
IRLML2030TRPBF by Infineon Technologies

IRLML2030TRPBF

Infineon Technologies

IRLML2030TRPBF by Infineon is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.1 ohm Drain-Source On Resistance and 12pF Feedback Capacitance.
BSP315P by Infineon Technologies

BSP315P

Infineon Technologies

BSP315P by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 4.68A and EAS of 24mJ, operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has 0.8 ohm RDS(on) and DUAL terminal position for efficient power dissipation.
ATP304-TL-H by Onsemi

ATP304-TL-H

Onsemi

The Onsemi ATP304-TL-H is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, 0.0089 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, this FET offers 656mJ EAS for robust performance in various electronic systems.
FDS6982AS_NL by Fairchild Semiconductor

FDS6982AS_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
FDMS86263P by Fairchild Semiconductor

FDMS86263P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 70 A;
IRF9358TRPBF by Infineon Technologies

IRF9358TRPBF

Infineon Technologies

IRF9358TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage and 73A IDM. Ideal for SWITCHING applications, it features a 0.0163 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
RFD16N05LSM9A by Fairchild Semiconductor

RFD16N05LSM9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
IRF7342TRPBF by Infineon Technologies

IRF7342TRPBF

Infineon Technologies

IRF7342TRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27A Max IDM and 114mJ EAS, operating in ENHANCEMENT MODE. With GULL WING terminals and a SMALL OUTLINE package style, it offers 0.105 ohm RDS(on) for efficient performance.
IRF7328TRPBF by Infineon Technologies

IRF7328TRPBF

Infineon Technologies

Infineon's IRF7328TRPBF is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 32A IDM, and 0.021 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic systems requiring efficient power management in compact designs.
2N7000 by Unisonic Technologies

2N7000

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IRF9540NSTRLPBF by International Rectifier

IRF9540NSTRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; No. of Terminals: 2; Terminal Form: GULL WING;
IRF640SPBF by International Rectifier

IRF640SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
SQM40P10-40L_GE3 by Vishay Intertechnology

SQM40P10-40L_GE3

Vishay Intertechnology

The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
SIRA01DP-T1-GE3 by Vishay Intertechnology

SIRA01DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
FDS6680A by Fairchild Semiconductor

FDS6680A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRLML6246TRPBF by Infineon Technologies

IRLML6246TRPBF

Infineon Technologies

IRLML6246TRPBF by Infineon is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 16A and ID of 4.1A, with 0.046 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
BS170 by Itt Components

BS170

Itt Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDV301N-NB9V008 by Fairchild Semiconductor

FDV301N-NB9V008

Fairchild Semiconductor

FDV301N-NB9V008 by Fairchild Semiconductor is a N-CHANNEL FET with 0.5A max drain current and 0.35W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various power management circuits.
SUM90P10-19L-E3 by Vishay Intertechnology

SUM90P10-19L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.